• DocumentCode
    2659379
  • Title

    Comparisons on performance improvement by nitride capping layer among different channel directions nMOSFETs

  • Author

    Tsai, Tzu-I ; Lee, Yao-Jen ; Chen, King-Sheng ; Wang, Jeff ; Hsueh, Fu-Kuo ; Lin, Horng-Chih ; Huang, Tiao-Yuan

  • Author_Institution
    Nat. Chiao Tung Univ., Hsinchu
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this study, we propose the electrical characteristics and reliability behaviors of nMOSFETs using SiN capping layer on Hi- or Cz-wafers on different channel directions.
  • Keywords
    MOSFET; semiconductor device reliability; silicon compounds; MOSFET; SiN; capping layer; channel directions; semiconductor device reliability; silicon nitride; Annealing; Degradation; Educational institutions; Electron mobility; Hydrogen; Laboratories; MOSFETs; Nanotechnology; Silicon compounds; Uniaxial strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422402
  • Filename
    4422402
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2659379