• DocumentCode
    2659388
  • Title

    Core-shell germanium-silicon nanoparticle structure for high κ nonvolatile memory applications

  • Author

    Liu, Hai ; Winkenwerder, Wyatt ; Liu, Yueran ; Stanley, Scott K. ; Ekerdt, John G. ; Banerjee, Sanjay K.

  • Author_Institution
    Univ. of Texas at Austin, Austin
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper presents a new germanium-silicon core-shell nanoparticle structure for nonvolatile memory applications. This core-shell can help to passivate Ge dots from oxidation, create more favorable interface between nanoparticle and high K dielectric materials and improve device performance.
  • Keywords
    Ge-Si alloys; high-k dielectric thin films; nanoelectronics; nanoparticles; passivation; random-access storage; core-shell nanoparticle structure; dot passivation; high K dielectric materials; nonvolatile memory; Chemical vapor deposition; Educational institutions; Electron traps; Germanium silicon alloys; Hafnium oxide; Nanoscale devices; Nanostructures; Nonvolatile memory; Oxidation; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422403
  • Filename
    4422403
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2659388