Phonon heat dissipation in silicon

Thermal budget is quickly emerging as the prominent limitation on future trends in scaling of semiconductor devices. Detailed understanding of electron-phonon coupling, as well as characteristics of the phonon heat generated by the electron current, such as phonon mode and spectrum, are crucial to our understanding of the micro-scale heating issues in semiconductor devices. We combine established numerical algorithms for Brillouin zone integration (Gilat et al.) with the deformation potentials given in the literature to compute detailed electron-phonon scattering rates. The electronic band structure is obtained from non-local pseudo-potentials (Cohen et al.), while the adiabatic bond-charge model is used for the phonon dispersion (Weber, 1977, Weber and Nielsen, 1979).