CMOS-compatible light emission device based on thin aluminum nitride film containing Al nanocrystals

Author

Liu, Y. ; Chen, T.P. ; Yang, M. ; Liu, Z. ; Ding, L. ; Zhang, S. ; Li, Y.B.

Author_Institution

Nanyang Technol. Univ., Singapore

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

Aluminum nitride (AlN) films have attractive physical properties, such as wide bandgap (6.2 eV), high thermal conductivity (320 W/mK), and good match of both thermal expansion coefficient and lattice constant to those of Si substrate . Based on these properties, AlN films can be applied in surface acoustic wave (SAW) devices, memories devices, and optoelectronic devices. It has been reported in our recent studies that amorphous AlN thin films containing aluminum nanocrystals (nc-Al) deposited on Si substrate by radio-frequency (rf) magnetron sputtering possess memory effect and exhibit interesting current conduction behaviors.

Keywords

CMOS integrated circuits; aluminium compounds; lattice constants; light emitting devices; nanostructured materials; sputtering; thermal conductivity; thermal expansion; AlN-Al; CMOS-compatible light emission device; Si; aluminium nanocrystals; aluminum nanocrystals deposition; aluminum nitride films; electron volt energy 6.2 eV; high thermal conductivity; lattice constant; memories devices; memory effect; optoelectronic devices; radio-frequency magnetron sputtering; surface acoustic wave devices; thermal expansion coefficient; thin aluminum nitride film; Aluminum nitride; Conductive films; Lattices; Nanocrystals; Photonic band gap; Semiconductor films; Sputtering; Substrates; Thermal conductivity; Thermal expansion;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422405

Filename

4422405