Title :
1.55-μm -Wavelength AlGaInAs Multiple-Quantum-Well Semi-Insulating Buried-Heterostructure Lasers
Author :
Yamamoto, T. ; Takada, K. ; Matsuda, M. ; Okumura, S. ; Akiyama, S. ; Ekawa, M.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi
Abstract :
1.55-mum-wavelength AlGaInAs semi-insulating buried-heterostructure (SI-BH) lasers were investigated. AlGaInAs lambda/4-phase-shift DFB SI-BH lasers with good high temperature characteristics as well as stable single-mode oscillation were fabricated for the first time
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; laser stability; quantum well lasers; thermo-optical effects; 1.55 micron; AlGaInAs; multiple-quantum-well semiinsulating buried-heterostructure lasers; phase-shifted DFB SI-BH laser fabrication; stable single-mode oscillation; temperature characteristics; Fabry-Perot; Laser modes; Laser stability; Optical waveguides; Power generation; Power lasers; Quantum well devices; Quantum well lasers; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
DOI :
10.1109/ISLC.2006.1708063
