Title :
High Power GaAs IMPATT Amplifiers
Author :
Nishitani, K. ; Sawano, H. ; Ishii, T. ; Mitsui, S. ; Kaji, E. ; Amano, A.
Abstract :
10 Watts P-N junction GaAs IMPATT diodes with MTTF more than 10/sup 6/ hours have been developed. Using these diodes, amplifiers of 5 Watts output power, 10-dB gain, 17 per cent efficiency, 150 MHz bandwidth and 80-dB thermal noise (S/N) have been constructed.
Keywords :
Gallium arsenide; High power amplifiers; Microwave devices; P-n junctions; Power generation; Schottky barriers; Schottky diodes; Solid state circuits; Temperature; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1977 IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/MWSYM.1977.1124415
