DocumentCode :
2659488
Title :
Nonlinear interaction of space charge waves in GaN films
Author :
Castro-R, Angel J. ; García-B, Abel ; Trejo-M, Francisco R.
Author_Institution :
Dept. of Mechatron., Polytech. Univ. of Pachuca, Pachuca, Mexico
fYear :
2010
fDate :
8-10 Sept. 2010
Firstpage :
604
Lastpage :
607
Abstract :
The nonlinear interaction of space charge waves including amplification and conversion to high frequencies in n-GaN semiconductor films, possessing the negative differential conductance phenomenon, is presented. The simulation results suggest amplification and frequency multiplication for input signals with frequencies f <; 220 GHz using the balance equations model.
Keywords :
III-V semiconductors; electrical conductivity; gallium compounds; negative resistance; semiconductor thin films; space charge waves; wide band gap semiconductors; GaN; balance equation model; negative differential conductance phenomenon; nonlinear interaction; semiconductor films; space charge waves; Antennas; Electric fields; Equations; Films; Gallium nitride; Mathematical model; Space charge; n-GaN; negative differential conductivity; space charge waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering Computing Science and Automatic Control (CCE), 2010 7th International Conference on
Conference_Location :
Tuxtla Gutierrez
Print_ISBN :
978-1-4244-7312-0
Type :
conf
DOI :
10.1109/ICEEE.2010.5608615
Filename :
5608615
Link To Document :
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