Maximum number of longitudinal modes oscillating in a quantum dot laser due to spatial hole burning

Author

Jiang, Li ; Asryan, Levon V.

Author_Institution

Virginia Tech., Virginia

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

The purpose of this work is to estimate the maximum number of longitudinal modes oscillating in a QD laser in the presence of a strong SHB effect. We analyze this number versus the cavity length and parameters controlling the optical gain of the structure. In semiconductor quantum well or bulk-active-region lasers, nonuniform carrier distributions are effectively smoothed out by diffusion processes. In quantum dot (QD) lasers, carriers that contribute to the stimulated emission are spatially localized in QDs.

Keywords

diffusion; gain control; quantum dot lasers; quantum well lasers; bulk-active-region laser; diffusion process; longitudinal mode oscillation; nonuniform carrier distribution; optical gain control; quantum dot laser; semiconductor quantum well; spatial hole burning; Educational institutions; Laser applications; Laser modes; Laser theory; Materials science and technology; Optical control; Quantum dot lasers; Quantum well lasers; Radiative recombination; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422411

Filename

4422411