3D structure simulation and proceeding to extract mobility parameters for FinFETs varying channel length

In this paper we present the 3D trapezoidal structure for analyzing FinFET MOSFETs using three different mesh regions, one at the top and two in the sidewalls of the fin, which allows the consideration of different carrier mobility at each region due to crystalline orientation and technological processing. A procedure for the extraction of the mobility parameters in each region is developed. Validation of the proposed structure was made with one FinFET´s array (with fixed fin width and varying channel length). A very good agreement is obtained between experimental and simulated characteristics.