Title :
20 GHz Band GaAs-FET Waveguide-Type Amplifier
Abstract :
Negative conductance reflection-type GaAs-FET amplifier was studied. Calculation showed a packaged GaAs-FET could be operated at high frequency than 20 GHz. An amplifier with 17 dB gain at 20 GHz was obtained using a packaged GaAs-FET mounted in waveguide circuit.
Keywords :
Admittance; Bandwidth; Coupling circuits; Gain; Laboratories; Noise figure; Packaging; Power amplifiers; Power generation; Resonant frequency;
Conference_Titel :
Microwave Symposium Digest, 1977 IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/MWSYM.1977.1124420
