Title :
Demonstration of 10 kV, 50A 4H-SiC DMOSFET with stable subthreshold characteristics across 25–200 °C operating temperatures
Author :
Howell, Robert S. ; Buchoff, Steven ; Van Campen, Stephen ; McNutt, Ty ; Nechay, Bettina ; Sherwin, Marc ; Singh, Ranbir
Author_Institution :
Northrop Grumman Electron. Syst., Linthicum Heights
Abstract :
This paper has described the fabrication and demonstration of 10 kV SiC MOSFETs, with active areas of 0.15 cm2 and 0.61 cm2, capable of operating at 5-10 A and 20-50 A respectively, and demonstrating excellent, stable subthreshold characteristics as a function of operating temperature (<200 degC ). These large area SiC DMOSFETs and their promising characteristics are excellent candidates to realize high voltage high speed solid state switching applications.
Keywords :
field effect transistor switches; power semiconductor switches; silicon compounds; 4H-SiC DMOSET; SiC; current 50 A; solid state switching applications; stable subthreshold characteristics; temperature 25 degC to 200 degC; voltage 10 kV; Breakdown voltage; Educational institutions; Electric breakdown; Intrusion detection; MOSFETs; Silicon carbide; Solid state circuits; Temperature dependence; Temperature distribution; Threshold voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422414
