• DocumentCode
    2659627
  • Title

    25W 915nm Lasers with Window Structure Fabricated by Impurity Free Vacancy Disordering (IFVD)

  • Author

    Taniguchi, H. ; Ishii, H. ; Minato, R. ; Nakasaki, R. ; Ohki, Y. ; Namegaya, T. ; Kasukawa, A.

  • Author_Institution
    Photonic Device Res. center, Furukawa Electr. Co. Ltd., Chiba
  • fYear
    2006
  • fDate
    2006
  • Firstpage
    33
  • Lastpage
    34
  • Abstract
    We have demonstrated high performance broad area single emitter lasers with window structure fabricated by newly developed IFVD technique. A very high output power of 25 W was obtained in 100mum wide lasers without facet degradation
  • Keywords
    laser beams; optical fabrication; semiconductor lasers; 100 micron; 25 W; 915 nm; IFVD window structure fabrication; broad area single emitter laser; impurity free vacancy disordering technique; Degradation; Impurities; Optical films; Optical losses; Power generation; Power lasers; Pulse measurements; Pulsed laser deposition; Semiconductor lasers; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
  • Conference_Location
    Kohala Coast, HI
  • Print_ISBN
    0-7803-9560-3
  • Type

    conf

  • DOI
    10.1109/ISLC.2006.1708072
  • Filename
    1708072
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2659627