Title :
9 W Output Power from a 808 nm Tapered Diode Laser in Pulse Mode Operation with Nearly Diffraction-Limited Beam Quality
Author :
Dittmar, F. ; Klehr, A. ; Sumpf, B. ; Knauer, A. ; Fricke, J. ; Erbert, G. ; Trankle, Gunther
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin
Abstract :
High-power 808 nm tapered diode lasers are fabricated based on a SLOC structure with very small divergence of 18deg. 14 W overall output power with 9 W of nearly diffraction-limited beam quality are presented
Keywords :
laser beams; laser cavity resonators; optical fabrication; semiconductor lasers; 14 W; 808 nm; SLOC structure; diffraction-limited beam quality; super-large optical-cavity structure; tapered diode laser fabrication; Diffraction; Diode lasers; Laser beams; Laser excitation; Laser modes; Lasers and electrooptics; Optical pulses; Power generation; Power lasers; Pump lasers;
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
DOI :
10.1109/ISLC.2006.1708073
