Title :
3 W - Broad Area Lasers and 12 W - Bars with Conversion Efficiencies up to 40% at 650 nm
Author :
Sumpf, B. ; Zorn, M. ; Staske, R. ; Fricke, J. ; Ressel, P. ; Ginolas, A. ; Paschke, K. ; Erbert, G. ; Weyers, M. ; Tränkle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin
Abstract :
High power broad area lasers and bars for the wavelength 650 nm diode lasers with an output power of 3 W and a conversion efficiency of 40% at 15deg are presented. 5 mm wide laser bars reach 12 W output power
Keywords :
laser beams; semiconductor lasers; 12 W; 15 C; 3 W; 5 mm; 650 nm; broad area diode laser; conversion efficiency; Bars; Diode lasers; Laser stability; Optical device fabrication; Power generation; Power lasers; Solid lasers; Thermal conductivity; Thermal resistance; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
DOI :
10.1109/ISLC.2006.1708074
