Title :
Electrical behavior of Au/IrO2/Si heterostructures
Author :
García, Alejandro Avila ; Meza Serrano, Alejandro ; Romero-Paredes Rubio, Gabriel
Author_Institution :
Dept. de Ing. Electr., CINVESTAV-IPN, Mexico City, Mexico
Abstract :
Au/IrO2/Si heterostructures were built. Their DC current versus temperature characteristics were experimentally obtained to get the corresponding Richardson plots. From these plots, the Richardson constant was estimated for these devices. Then, from the current-voltage plots at room temperature the series resistance, ideality factor and barrier height were obtained by applying the method proposed by Cheung for parameter extraction from the thermionic theory. The model is found to fit reasonably the electrical behavior of the heterostructures for voltages higher than ÕB.
Keywords :
Schottky barriers; gold; iridium compounds; semiconductor heterojunctions; silicon; Au-IrO2-Si; Richardson constant; barrier height; current-voltage plots; ideality factor; parameter extraction; series resistance; temperature 293 K to 298 K; thermionic theory; Films; Gold; Resistance; Schottky diodes; Silicon; Temperature; Temperature measurement; Au/IrO2/Si heterostructure; Cheung´s method; DC measurements;
Conference_Titel :
Electrical Engineering Computing Science and Automatic Control (CCE), 2010 7th International Conference on
Conference_Location :
Tuxtla Gutierrez
Print_ISBN :
978-1-4244-7312-0
DOI :
10.1109/ICEEE.2010.5608626
