Title :
Characteristics and thermal stability of MOS devices with metal gate stacks of MoN and TiN
Author :
Fu, Chong-Hao ; Chang-Liao, Kuei-Shu ; Chien, Po-Yen
Author_Institution :
Nat. Tsing Hua Univ., Hsinchu
Abstract :
In this work, a novel metal gate stack is proposed for PMOS applications. The influences of MoN metal gate with TiN layer above or below and various post-metal-annealing treatments were studied. Experimental results show that metal gate stack with TiN under MoN film exhibits better electrical characteristics and thermal stability despite a little lower work function.
Keywords :
MIS devices; MOS integrated circuits; MOS devices; MoN; MoN film; MoN metal gate; PMOS applications; TiN; TiN layer; electrical characteristics; metal gate stacks; post-metal-annealing treatments; thermal stability; Channel bank filters; Crystallization; Electric variables; Electrodes; Leakage current; MOS capacitors; MOS devices; Rapid thermal annealing; Thermal stability; Tin;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1891-6
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422420
