Title :
Reliability-oriented IGBT selection for high power converters
Author :
Jun Wang ; Najmi, Vahid ; Burgos, Rolando ; Boroyevich, Dushan
Author_Institution :
Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
This paper presents a methodology to select IGBT in the reliability-oriented design of high power converters. The failure rate models are presented and the main contributors are analyzed. A review of commercial IGBT chip technologies is conducted, which are used in the later IGBT selections. The reliability models of the power module that includes the IGBTs and other components are built by Markov-Chain Model. Finally, a methodology to conduct the IGBT selection process is developed and illustrated by a given design example, with the goal of the highest power module reliability by selecting the most appropriate IGBTs.
Keywords :
Markov processes; failure analysis; insulated gate bipolar transistors; power convertors; semiconductor device reliability; Markov-chain model; commercial chip technologies; failure rate models; high power converters; power module reliability; reliability-oriented IGBT selection; Insulated gate bipolar transistors; Junctions; Multichip modules; Reliability engineering; Stress; Thyristors; High Voltage; IGBT; Markov-Chain Model; Medium Voltage; Reliability-Oriented Design;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE
Conference_Location :
Charlotte, NC
DOI :
10.1109/APEC.2015.7104701