Title :
A Dielectric Resonator Oscillator with 5 PPM Long Term Frequency Stability at 4 GHz
Author :
Plourde, J.K. ; Linn, D.F. ; Tatsuguchi, I. ; Swan, C.B.
Abstract :
High Q, temperature stable dielectric resonators are excellent stabilizing elements for microwave transistor oscillators. A 4 GHz Ba/sub 2/Ti/sub 9/O/sub 20/ resonator integrated with a Si bipolar transistor in a compact oven has a frequency stability of 5 ppm/yr., 4/spl deg/ to 60/spl deg/C (40 to 140/spl deg/F). It is significantly simpler than alternative generators and has 10 to 20 dB lower FM noise. An 18 GHz generator is also described which uses a 4.5 GHz oscillator and a varactor quadrupler.
Keywords :
Bipolar transistors; Dielectrics; Frequency; Microwave oscillators; Microwave ovens; Microwave transistors; Noise generators; Stability; Temperature; Varactors;
Conference_Titel :
Microwave Symposium Digest, 1977 IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/MWSYM.1977.1124432
