Title :
A Half-Micron Gate Low Noise GaAs MESFET and Amplifiers
Author :
Kodera, H. ; Kaneko, Y. ; Sato, H.
Abstract :
A half-micron gate GaAs MESFET is designed and fabricated for the minimum gate parasitics. The single bonding-pad design of the gate and intentional side-etching of the lower layer of the double-layered Schottky-gate satisfy the above requirement. The best noise figure so far measured is 2.5 dB at 10 GHz for the packaged device and 2.1 dB at 12 GHz for the chip device. An X-band unit amplifier is designed for the FET chip. It can be cascaded to get a specified power gain or modified to have a necessary bandwidth.
Keywords :
Bandwidth; Bonding; FETs; Gallium arsenide; Low-noise amplifiers; MESFETs; Noise figure; Noise measurement; Packaging; Semiconductor device measurement;
Conference_Titel :
Microwave Symposium Digest, 1977 IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/MWSYM.1977.1124433
