Title :
Magnetically tunable SAW-resonator
Author :
Smole, P. ; Ruile, W. ; Korden, C. ; Ludwig, A. ; Quandt, E. ; Krassnitzer, S. ; Pongratz, P.
Author_Institution :
Inst. of Solid State Phys., Vienna Univ. of Technol., Austria
Abstract :
At present different tuning methods for acoustic devices exist. Established technologies are the integration of strictive materials or semiconductor structures in the cavity of a delay-line or resonator. Common to all these devices is the tuning of delay time or phase by changing the electrical or mechanical surface boundary condition for the propagating surface acoustic wave (SAW). This paper presents a completely new approach for frequency tuning. The resonance frequency of a SAW resonator is shifted by directly changing the propagation velocity of the SAW. This is achieved by altering the corresponding elastic stiffness by an external magnetic field, using a multilayer structure exhibiting giant ΔE effect. A sacrificial layer technique is used to realize a first experimental device, basically consisting of a piezoelectric ZnO-layer on an amorphous magnetostrictive layer of FeCo-SiB. All layers have been deposited by RF-sputtering on a 4" quartz carrier-wafer. Aluminum electrode structures were deposited subsequently in order to excite SAWs. In the measurement setup an external magnetic field between 0 to 50 Oe has been applied to the device. A tuning range of about -1.2% and -0.9% at center frequencies of 1.2 and 1.6 GHz could be demonstrated, respectively.
Keywords :
II-VI semiconductors; acoustic wave propagation; amorphous magnetic materials; boron alloys; cobalt alloys; iron alloys; magnetic multilayers; magnetostriction; piezoelectric semiconductors; silicon alloys; sputter deposition; surface acoustic wave resonator filters; surface acoustic wave resonators; tuning; wide band gap semiconductors; zinc compounds; 1.2 to 1.6 GHz; FeCoSiB-ZnO; RF sputtering; SiO2; aluminum electrode structures; elastic stiffness; frequency tuning; giant ΔE effect; magnetically tunable SAW resonator; multilayer structure; piezoelectric ZnO layer; quartz carrier wafer; radio frequency sputtering; resonance frequency; surface acoustic wave resonator; surface acoustic wave resonator filters; velocity propagation; Acoustic devices; Acoustic propagation; Amorphous magnetic materials; Frequency; Magnetic field measurement; Magnetic semiconductors; Magnetostriction; Surface acoustic wave devices; Surface acoustic waves; Tuning;
Conference_Titel :
Frequency Control Symposium and PDA Exhibition Jointly with the 17th European Frequency and Time Forum, 2003. Proceedings of the 2003 IEEE International
Print_ISBN :
0-7803-7688-9
DOI :
10.1109/FREQ.2003.1275210