DocumentCode :
2659751
Title :
Electronic properties of TiO2 thin films under UV light irradiation
Author :
Watanabe, Y. ; Muramoto, Y. ; Shimizu, N.
Author_Institution :
Dept. of Electr. & Electron. Eng., Meijo Univ., Nagoya, Japan
fYear :
2010
fDate :
17-20 Oct. 2010
Firstpage :
1
Lastpage :
4
Abstract :
TiO2 has photocatalysis. When UV light irradiated, electron-hole pairs are generated in TiO2. The source of photocatalysis is oxidation and reduction reactions due to electrons and holes at the surface. In this paper, we tried to obtain the electronic properties such as resistivity, carrier density and mobility in anatase TiO2 thin films under UV light irradiation. The resistivity decreased with UV light intensity. Without UV light irradiation, the resistivity was over the measuring range. The measured values of the Hall voltage were not stable. We consider contributions to the Hall voltage of electrons and holes are canceled each other as an intrinsic semiconductor. It is also suggested that mobilities of electrons and holes have unstable behavior under the combination of magnetic field and UV light irradiation.
Keywords :
carrier density; carrier mobility; catalysis; electrical resistivity; electron-hole recombination; photochemistry; semiconductor materials; semiconductor thin films; titanium compounds; ultraviolet radiation effects; Hall voltage; TiO2; UV light irradiation; anatase thin films; carrier density; carrier mobility; electrical resistivity; electron-hole pairs; electronic properties; Charge carrier processes; Conductivity; Magnetic field measurement; Magnetic fields; Radiation effects; Semiconductor device measurement; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation and Dielectric Phenomena (CEIDP), 2010 Annual Report Conference on
Conference_Location :
West Lafayette, IN
ISSN :
0084-9162
Print_ISBN :
978-1-4244-9468-2
Type :
conf
DOI :
10.1109/CEIDP.2010.5724029
Filename :
5724029
Link To Document :
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