DocumentCode
2659751
Title
Electronic properties of TiO2 thin films under UV light irradiation
Author
Watanabe, Y. ; Muramoto, Y. ; Shimizu, N.
Author_Institution
Dept. of Electr. & Electron. Eng., Meijo Univ., Nagoya, Japan
fYear
2010
fDate
17-20 Oct. 2010
Firstpage
1
Lastpage
4
Abstract
TiO2 has photocatalysis. When UV light irradiated, electron-hole pairs are generated in TiO2. The source of photocatalysis is oxidation and reduction reactions due to electrons and holes at the surface. In this paper, we tried to obtain the electronic properties such as resistivity, carrier density and mobility in anatase TiO2 thin films under UV light irradiation. The resistivity decreased with UV light intensity. Without UV light irradiation, the resistivity was over the measuring range. The measured values of the Hall voltage were not stable. We consider contributions to the Hall voltage of electrons and holes are canceled each other as an intrinsic semiconductor. It is also suggested that mobilities of electrons and holes have unstable behavior under the combination of magnetic field and UV light irradiation.
Keywords
carrier density; carrier mobility; catalysis; electrical resistivity; electron-hole recombination; photochemistry; semiconductor materials; semiconductor thin films; titanium compounds; ultraviolet radiation effects; Hall voltage; TiO2; UV light irradiation; anatase thin films; carrier density; carrier mobility; electrical resistivity; electron-hole pairs; electronic properties; Charge carrier processes; Conductivity; Magnetic field measurement; Magnetic fields; Radiation effects; Semiconductor device measurement; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation and Dielectric Phenomena (CEIDP), 2010 Annual Report Conference on
Conference_Location
West Lafayette, IN
ISSN
0084-9162
Print_ISBN
978-1-4244-9468-2
Type
conf
DOI
10.1109/CEIDP.2010.5724029
Filename
5724029
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