Title :
High Power Microwave Static Induction Transistor
Author :
Kajiwara, Yugo ; Yukimoto, T. ; Shirahata, K.
Abstract :
A new type of the transistor called "Static Induction Transistor (SIT)", based on a short channel vertical J-FET structure, has been successfully verified as a promising device for microwave high power operation. The experimental transistors we fabricated have demonstrated the following remarkable features; (1) f/sub max/ of above 5 GHz, (2) amplifying output power of 13 watts at 1GHz and (3) oscillating output power of 100 watts at 200 MHz. These data are the highest among any reported FET transistors at this frequency range.
Keywords :
Bipolar transistors; Capacitance; Electron mobility; Frequency; Microwave FETs; Microwave transistors; Neodymium; Power generation; Temperature dependence; Voltage control;
Conference_Titel :
Microwave Symposium Digest, 1977 IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/MWSYM.1977.1124434
