Title :
An Experimental Evaluation of X-Band GaAs FET Mixers Using Single and Dual-Gate Devices
Author :
Cripps, S.C. ; Nielsen, O. ; Parker, D. ; Turner, J.A.
Abstract :
Experimental results are presented for X-band GaAs FET mixers. Two circuits using commercially available single-gate devices have yielded good conversion gains at 10 GHz, and a specially developed dual-gate device in a simple microwave circuit has yielded 11 dB conversion gain and 6.5 dB noise figure (D.S.B. ), at 10 GHz.
Keywords :
Circuit noise; Frequency; Gallium arsenide; Local oscillators; Microwave FETs; Microwave circuits; Microwave devices; Performance gain; Transconductance; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 1977 IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/MWSYM.1977.1124435
