DocumentCode
2659776
Title
An Experimental Evaluation of X-Band GaAs FET Mixers Using Single and Dual-Gate Devices
Author
Cripps, S.C. ; Nielsen, O. ; Parker, D. ; Turner, J.A.
fYear
1977
fDate
21-23 June 1977
Firstpage
285
Lastpage
288
Abstract
Experimental results are presented for X-band GaAs FET mixers. Two circuits using commercially available single-gate devices have yielded good conversion gains at 10 GHz, and a specially developed dual-gate device in a simple microwave circuit has yielded 11 dB conversion gain and 6.5 dB noise figure (D.S.B. ), at 10 GHz.
Keywords
Circuit noise; Frequency; Gallium arsenide; Local oscillators; Microwave FETs; Microwave circuits; Microwave devices; Performance gain; Transconductance; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1977 IEEE MTT-S International
Conference_Location
San Diego, CA, USA
Type
conf
DOI
10.1109/MWSYM.1977.1124435
Filename
1124435
Link To Document