Digitally addressable vertically aligned carbon nanofibers for implementation of massively parallel maskless lithography

Author

Eliza, S.A. ; Islam, S.K. ; Rahman, T. ; Vijayaraghavan, R. ; Grundman, T. ; Blalock, B. ; Randolph, S.J. ; Baylor, L.R. ; Bigelow, T.S. ; Gardner, W.L. ; Ericson, M.N. ; Moore, J.A.

Author_Institution

Univ. of Tennessee, Knoxville

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

Field emission (FE) of electrons from nanostructured graphitic carbon-based materials has been an area of intense investigation in recent years. Each field emitting device has control gates and an electron emitting cathode, which emits electron when a sufficient voltage is applied at the gate electrode. Recently, a technique for fabricating gated cathode structures that uses a single in situ grown vertically aligned carbon nanofiber (VACNF) as a FE element has been reported. This paper presents digitally addressable VACNFs for implementation of massively parallel maskless lithography.

Keywords

carbon; nanolithography; nanostructured materials; C; field emission; gated cathode structures; in situ grown vertically aligned carbon nanofiber; optical character recognition; parallel maskless lithography; Carbon dioxide; Cathodes; Chemical elements; Electrodes; Electron emission; Iron; Lithography; Nanostructured materials; Organic materials; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422425

Filename

4422425