Title :
Modeling the thermal behavior of chalcogenide based phase change memory cell
Author :
Devasia, Archana ; Kurinec, Santosh
Author_Institution :
Rochester Inst. of Technol., Rochester
Abstract :
The presented work, reports a 2D thermal model for a PCM cell employing stacked Ge-chalcogenide (Ge2Se3) and Sn-chalcogenide (SnSe) layers as phase change materials. The thermal behavior exhibited by the PCM cell upon melting of the Ge2Se3 layer is explored at the 130nm, 65nm and 45nm technology nodes. The suitability of doped polysilicon, TiN and TaSiNx as potential heater materials with the purpose of reducing programming current below 1 mA is examined. Possibility of thermal crosstalk between adjacent cells driven by MOSFETs, is also investigated.
Keywords :
germanium compounds; phase change materials; semiconductor storage; tantalum compounds; thermal analysis; tin compounds; titanium compounds; Ge2Se3; MOSFET; SnSe; TaSiN; TiN; chalcogenide based phase change memory cell; doped polysilicon; size 130 mum; size 45 mum; size 65 mum; thermal behavior; thermal crosstalk; CMOS technology; Conductivity; Crosstalk; Doping; Equations; Nonvolatile memory; Paper technology; Phase change materials; Phase change memory; Tin;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1891-6
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422431
