Title :
GaInNAs DFB Laser with Buried GaAs Grating
Author :
Hashimoto, Jun-ichi ; Koyama, Kenji ; Ishizuka, Takashi ; Tsuji, Yukihiro ; Fujii, Kousuke ; Yamada, Takashi ; Katsuyama, Tsukuru
Author_Institution :
Optoelectron. Ind. & Technol. Dev. Assoc., Yokohama
Abstract :
We for the first time fabricated a GaInNAs DFB laser having a buried GaAs grating in the center current injection region. A successful DFB laser oscillation with the threshold current of 34 mA was obtained
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; semiconductor lasers; 34 mA; DFB laser; GaAs; GaInNAs; buried GaAs grating; center current injection region; laser oscillation; optical fabrication; Distributed feedback devices; Etching; Gallium arsenide; Gratings; Laser feedback; Optical coupling; Optical materials; Temperature; Textile industry; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
DOI :
10.1109/ISLC.2006.1708084
