1-Step OMVPE Grown Strongly Index-Coupled Membrane DFB Laser with Surface Corrugation Grating Structure

Author

Sakamoto, Shinichi ; Naitoh, Hideyuki ; Kawashima, Hiroyuki ; Nishimoto, Yoshifumi ; Tamura, Shigeo ; Maruyama, Takeo ; Arai, Shigehisa

Author_Institution

Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol.

fYear

2006

fDate

2006

Firstpage

59

Lastpage

60

Abstract

Strongly index-coupled GaInAsP/InP membrane DFB laser, consisting of a flat single-quantum-well active region, was realized by adopting a surface corrugation structure. A threshold pump power as low as 1.1 mW was achieved under RT-CW condition for the stripe width of 2.0 mum and the cavity length of 60 mum. The index-coupling coefficient was estimated to be 3,200 cm^-1 for the surface corrugation depth of 50 nm

Keywords

III-V semiconductors; MOCVD; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical fabrication; quantum well lasers; semiconductor lasers; vapour phase epitaxial growth; 1-step OMVPE growth; 2.0 micron; 50 nm; 60 micron; GaInAsP-InP; RT-CW condition; cavity length; flat single-quantum-well active region; index-coupling coefficient; membrane DFB laser; surface corrugation grating structure; threshold pump power; Biomembranes; Corrugated surfaces; Distributed feedback devices; Gratings; Indium phosphide; Optical interconnections; Optical pumping; Optical surface waves; Pump lasers; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International

Conference_Location

Kohala Coast, HI

Print_ISBN

0-7803-9560-3

Type

conf

DOI

10.1109/ISLC.2006.1708085

Filename

1708085