2.97-GHz CVD diamond ring resonator with Q >40,000

Author

Naing, Thura Lin ; Beyazoglu, Turker ; Wu, Lingqi ; Akgul, Mehmet ; Ren, Zeying ; Rocheleau, Tristan O. ; Nguyen, Clark T C

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA

fYear

2012

fDate

21-24 May 2012

Firstpage

1

Lastpage

6

Abstract

A capacitive-gap transduced micromechanical ring resonator based on a radial contour vibration mode and constructed from hot filament CVD boron-doped microcrystalline diamond has achieved a Q of 42,900 at 2.9685GHz that represents the highest series-resonant Q yet measured at this frequency for any on-chip room temperature resonator, as well as the highest f·Q of 1.27×10¹⁴ for acoustic resonators, besting even macroscopic bulk-mode devices. Values like these in a device occupying only 870μm² may soon make possible on-chip realizations of RF channelizers and ultra-low phase-noise GHz oscillators for secure communications.

Keywords

UHF resonators; boron; chemical vapour deposition; micromechanical resonators; temperature sensors; CVD diamond ring resonator; RF channelizers; acoustic resonators; capacitive-gap transduced micromechanical ring resonator; communication security; frequency 2.9685 GHz; frequency 2.97 GHz; hot filament CVD boron-doped microcrystalline diamond; macroscopic bulk-mode devices; on-chip room temperature resonator; radial contour vibration mode; ultralow phase-noise oscillators; Acoustic beams; Electrodes; Frequency measurement; Materials; Phase noise; Resonant frequency; CVD diamond; MEMS; RF MEMS; filter; micromechanical; oscillator; quality factor; resonator; ring resonator;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium (FCS), 2012 IEEE International

Conference_Location

Baltimore, MD

ISSN

1075-6787

Print_ISBN

978-1-4577-1821-2

Type

conf

DOI

10.1109/FCS.2012.6243723

Filename

6243723