DocumentCode :
2659961
Title :
SiC avalanche photodiodes
Author :
Campbell, Joe C. ; Liu, Han-Din ; Mcintosh, Dion ; Bai, Xiaogang
Author_Institution :
Virginia Univ., Charlottesville
fYear :
2007
fDate :
12-14 Dec. 2007
Firstpage :
1
Lastpage :
2
Abstract :
Ultraviolet detectors are becoming increasingly important in medical, military, and environmental applications, including biological agent detection and non-line-of-sight (NLOS) communications. SiC avalanche photodiodes (APDs) are an attractive candidate for those applications that place a premium on detectors that are compact, rugged, and inexpensive. This paper presents an overview of 4H-SiC APDs.
Keywords :
avalanche photodiodes; silicon compounds; ultraviolet detectors; wide band gap semiconductors; SiC; SiC APD; SiC avalanche photodiodes; silicon compounds; ultraviolet detectors; Application software; Avalanche photodiodes; Breakdown voltage; Dark current; Detectors; Educational institutions; Electric breakdown; Photoconductivity; Silicon carbide; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
Type :
conf
DOI :
10.1109/ISDRS.2007.4422434
Filename :
4422434
Link To Document :
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