DocumentCode
2659966
Title
InP-based Quantum Cascade Distributed Feedback Lasers with Deeply Etched Lateral Gratings
Author
Kennedy, K. ; Revin, D.G. ; Krysa, A.B. ; Groom, K.M. ; Wilson, L.R. ; Cockburn, J.W. ; Hogg, R.A.
Author_Institution
EPSRC Nat. Centre for III-V Technol., Univ. of Sheffield
fYear
2006
fDate
2006
Firstpage
61
Lastpage
62
Abstract
We report device results and techniques for fabricating gratings for InP-based quantum cascade (DFB) lasers, grown by MOVPE. Deeply etched lateral gratings are achieved by the development of a novel two-stage ICP etch process
Keywords
III-V semiconductors; MOCVD; diffraction gratings; distributed feedback lasers; indium compounds; optical fabrication; quantum cascade lasers; sputter etching; vapour phase epitaxial growth; InP; MOVPE; deeply etched lateral gratings; gratings fabrication; quantum cascade distributed feedback lasers; two-stage inductively coupled plasma etch process; Distributed feedback devices; Etching; Gas lasers; Gratings; Laser feedback; Laser modes; Laser tuning; Plasma applications; Plasma chemistry; Quantum cascade lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location
Kohala Coast, HI
Print_ISBN
0-7803-9560-3
Type
conf
DOI
10.1109/ISLC.2006.1708086
Filename
1708086
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