Title :
A new electrostatically-excited silicon structure for CMUT and TE-mode resonators and sensing applications
Author :
Ivan, Mihaela E. ; Dulmet, Bernard ; Martin, Gilles ; Abbe, Philippe ; Robert, Laurent ; Ballandras, Sylvain
Author_Institution :
Time & Freq. Dept., Femto-ST Inst., Besancon, France
Abstract :
This paper presents a new patent-pending micro-mechanical BAW resonant structure driven by electrostatic force. The devices are based on a one-port design with a 1 μm-thick electrostatic gap to superimpose a static bias voltage and a dynamic excitation to a silicon plate. Depending on the thickness of the standard silicon wafers, flexural or thickness-extensional (TE) modes can alternatively be driven, yielding a resonant frequency close to 68 kHz in flexural modes, and 10 MHz in TE modes. Modelling steps and experimental results are provided and compared for both kinds of modes. An application example of the flexural mode structure to gravimetric sensing is outlined.
Keywords :
bulk acoustic wave devices; capacitive sensors; electrostatics; micromechanical resonators; microsensors; silicon; ultrasonic transducers; CMUT; Si; TE-mode resonators; capacitive micromachined ultrasonic transducer; dynamic excitation; electrostatic force; electrostatic gap; electrostatically-excited silicon structure; flexural modes; frequency 10 MHz; gravimetric sensing; one-port design; patent-pending micromechanical BAW resonant structure; sensing applications; silicon plate; silicon wafers; static bias voltage; thickness-extensional modes; Cavity resonators; Couplings; Electrostatics; Resonant frequency; Sensors; Silicon; Substrates;
Conference_Titel :
Frequency Control Symposium (FCS), 2012 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1821-2
DOI :
10.1109/FCS.2012.6243724
