Title :
Ultrathin MBE-Grown AlN/GaN HEMTs with record high current densities
Author :
Cao, Yijia ; Deen, David ; Simon, Jerome ; Bean, J. ; Su, Naifang ; Zhang, Juyong ; Fay, Patrick ; Xing, Hao ; Jena, D.
Author_Institution :
Notre Dame Univ., Notre Dame
Abstract :
III-V nitride-based HEMT technology has made rapid progress over the last decade. Benefiting from the extremely high polarization charge, in this work, we demonstrate record high DC current density (2.9 A/mm) and very high extrinsic transconductance (~430 mS/mm) AIN/GaN HEMTs.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; high electron mobility transistors; molecular beam epitaxial growth; AlN-GaN; DC current density; III-V nitride-based HEMT technology; high extrinsic transconductance; record high current densities; ultrathin MBE-grown HEMT; Aluminum gallium nitride; Current density; Educational institutions; Gallium nitride; HEMTs; Heterojunctions; III-V semiconductor materials; MODFETs; Polarization; Scattering;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422436
