DocumentCode
2660003
Title
Analysis of AlGaN/GaN HEMT modulated by photosystem I reaction centers
Author
Eliza, S.A. ; Islam, S.K. ; Lee, I. ; Greenbaum, E.
Author_Institution
Tennessee Univ., Knoxville
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
This paper presents for the first time a practical substitute to the laboratory (KFM) techniques for electrical characterization of PS I reaction centers which is necessary precondition to eventual commercial realization of molecular photovoltaic devices. The experimental study and an analytical model have been presented to investigate the charge effects of PS I reaction centers on the characteristics of AlGaN/GaN high electron mobility transistor (HEMT).
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; Photosystem I reaction centers; electrical characterization; high electron mobility transistor; molecular photovoltaic devices; Aluminum gallium nitride; Educational institutions; Gallium nitride; HEMTs; Laboratories; MODFETs; Optoelectronic and photonic sensors; Polarization; Sensor systems; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1891-6
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422437
Filename
4422437
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