Title :
Analysis of AlGaN/GaN HEMT modulated by photosystem I reaction centers
Author :
Eliza, S.A. ; Islam, S.K. ; Lee, I. ; Greenbaum, E.
Author_Institution :
Tennessee Univ., Knoxville
Abstract :
This paper presents for the first time a practical substitute to the laboratory (KFM) techniques for electrical characterization of PS I reaction centers which is necessary precondition to eventual commercial realization of molecular photovoltaic devices. The experimental study and an analytical model have been presented to investigate the charge effects of PS I reaction centers on the characteristics of AlGaN/GaN high electron mobility transistor (HEMT).
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; Photosystem I reaction centers; electrical characterization; high electron mobility transistor; molecular photovoltaic devices; Aluminum gallium nitride; Educational institutions; Gallium nitride; HEMTs; Laboratories; MODFETs; Optoelectronic and photonic sensors; Polarization; Sensor systems; Zinc compounds;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1891-6
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422437
