Title :
Design and optimization of the SOI field effect diode (FED)
Author :
Yang, Yang ; Salman, Akram A. ; Ioannou, Dimitris E. ; Beebe, Stephen G.
Author_Institution :
George Mason Univ., Fairfax
Abstract :
This article deals with the importance of the structure of FED, that lies in the fact that by appropriately biasing it, its operation can be switched between SCR-like and diode-like. For devices with p-type body doping the depletion of electrons beneath G1 imposes an upper limit to the breakdown voltage. This paper proposes to use n-type body doping instead to achieve high breakdown voltage and reduce the gate length for higher turn-on speed and lower on-resistance.
Keywords :
field effect devices; optimisation; semiconductor device models; semiconductor diodes; semiconductor doping; silicon-on-insulator; FED structure; SCR operation; SOI; breakdown voltage; electron depletion; field effect diode; n-type body doping; Bipolar transistors; CMOS technology; Channel bank filters; Charge carrier lifetime; Design optimization; Diodes; Doping; Niobium; Space technology; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1891-6
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422443
