Electromechanical response of silicon nanowires: Bandgap and effective mass

In conclusion we have observed dramatic change in the band structure of SiNW which prove exploitable in many silicon based optical and mechanical sensors and devices. The transition from indirect to direct region proves that a transparent NW can be converted to an absorptive one. Stress induced by temperature and/or lattice mismatch (e.g. Si/Ge epitaxial layers) can be the basis for myriad of sensor schemes based on the results in this paper. Literature shows the possibility of growing nanowires in a bridge-like structure on a deformable substrate (R. He et al., 2006).