DocumentCode
2660174
Title
A nonparabolicity model compared to tight-binding: The case of square silicon quantum wires
Author
Esposito, Aniello ; Luisier, Mathieu ; Frey, Martin ; Schenk, Andreas
Author_Institution
ETH Zurich, Zurich
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
The aim of this work is to elaborate a method which is capable to improve the results of the EMA without loosing its time efficiency. Given a fixed device configuration and calculated quantities such as currents from an atomistic simulation, the method should reproduce these results by means of simple tuning parameters. For this purpose we consider a nonparabolicity (NP) model used by Trellakis et. al. (2002). This model turns out to be treatable within the same transport model as we use for the EMA thus maintaining a reasonable time efficiency.
Keywords
effective mass; electron transport theory; semiconductor quantum wires; silicon; tight-binding calculations; nonparabolicity model; square silicon quantum wires; tight-binding model; time efficiency; transport model; Educational institutions; Effective mass; Electronic mail; Laboratories; Lattices; Quantum mechanics; Semiconductor materials; Silicon; Voltage; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422447
Filename
4422447
Link To Document