Title :
Facet Passivation of GaInAsP/InP Laser Diodes by Aluminum Ultrathin Layer Insertion
Author :
Ichikawa, H. ; Fukuda, C. ; Hamada, K. ; Nakabayashi, T.
Author_Institution :
Transmission Devices R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama
Abstract :
We demonstrated that facet degradation is successfully suppressed by inserting aluminum ultra-thin layer between semiconductor and dielectric coating films. We also clarified that aluminum layer suppress lack of phosphorus and increase in surface recombination
Keywords :
III-V semiconductors; aluminium; arsenic compounds; dielectric thin films; gallium arsenide; gallium compounds; indium compounds; optical films; semiconductor lasers; surface recombination; Al; GaInAsP-InP; aluminum ultrathin layer insertion; dielectric coating films; facet degradation; facet passivation; laser diodes; semiconductor laser; surface recombination; Aluminum; Argon; Coatings; Degradation; Diode lasers; Indium phosphide; Optical films; Optical surface waves; Oxidation; Passivation;
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
DOI :
10.1109/ISLC.2006.1708097
