Lasing at ~1.3 μm from InAs Quantum Dots with GaInNAs Embedding Layers Grown by Metalorganic Chemical Vapor Deposition

Author

Hashimoto, R. ; Kushibe, M. ; Ezaki, M. ; Hatakoshi, G. ; Nishioka, M. ; Arakawa, Y.

Author_Institution

Nanoelectron. Collaborative Res. Center, Tokyo Univ.

fYear

0

fDate

0-0 0

Firstpage

87

Lastpage

88

Abstract

Self-assembled InAs quantum dot (QD) lasers emitting at 1.29 mum on GaAs substrates grown by metalorganic chemical vapor deposition (MOCVD) were achieved by using GaInNAs embedding layers. This emission wavelength is the longest wavelength ever reported for QD lasers grown by MOCVD

Keywords

III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser beams; nitrogen compounds; quantum dot lasers; ridge waveguides; self-assembly; waveguide lasers; 1.29 micron; GaAs; GaAs substrates; GaInNAs; GaInNAs embedding layers; InAs; MOCVD; QD lasers; metalorganic chemical vapor deposition; ridge waveguide laser performance; self-assembled InAs quantum dot laser; Chemical lasers; Chemical vapor deposition; Gallium arsenide; MOCVD; Quantum dot lasers; Quantum dots; Research and development; Semiconductor lasers; Substrates; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International

Conference_Location

Kohala Coast, HI

Print_ISBN

0-7803-9560-3

Type

conf

DOI

10.1109/ISLC.2006.1708099

Filename

1708099