Title :
Enhancement of Optical Gain in Sb-based MIR Diode Lasers
Author :
Kisin, M.V. ; Shterengas, L. ; Kim, J.G. ; Belenky, G.
Author_Institution :
Dept. of Electr. & Comput. Eng., State Univ. of New York, Stony Brook, NY
Abstract :
In this work we present a successful approach to enhance the gain characteristics of In(Al)GaAsSb MIR diode lasers by using In-rich highly-strained quaternary QW materials. Our lasers demonstrate three times increase in the differential gain with halved threshold current. Calculations show that observed gain enhancement is caused by improvement of hole confinement in highly strained QWs
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; gallium arsenide; gallium compounds; indium compounds; laser beams; optical materials; quantum well lasers; semiconductor lasers; InAlGaAsSb-based mid-infrared diode lasers; gain characteristics; hole confinement; optical gain enhancement; strained quaternary QW materials; threshold current; Capacitive sensors; Diode lasers; Distribution functions; Gain measurement; Gas lasers; Laser modes; Laser theory; Optical design; Quantum well lasers; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
DOI :
10.1109/ISLC.2006.1708100
