Structural and electrical characterization of thermally oxidized Zn films

High quality ZnO films were obtained by thermal oxidation of Zn films on the temperature range from 300 to 700 °C. Zn films of 190 nm in thickness were deposited on silicon and glass substrates by the sputtering technique. Thermal oxidation was done at normal environment conditions. The complete oxidation of the Zn films was determined by the ZnO films transparency. The ZnO films resulted dense with mirror-like surface. The film structural characterization was realized by X-ray diffraction measurements. The electrical characteristics were measured by the van der Pauw method at room temperature. The ZnO films resulted n-type with carrier concentration of 10¹⁶ to 10¹⁷cm^-3 and mobility values in the range of 1 to 50 cm²/V-s.