Title :
Analytic diffusion and drift components of drain current for double gate MOSFETs
Author :
Shih, Chun-Hsing ; Wang, Jhong-Sheng
Author_Institution :
Yuan Ze Univ., Taipei
Abstract :
Analytic, sound expressions of drain currents are derived for double gate MOSFETs including both drift and diffusion components. Although the drift current is strongly enhanced beyond threshold voltage, the diffusion current plays a more important role in the subthreshold region.
Keywords :
MOSFET; diffusion; diffusion components; double gate MOSFETs; drain currents; drift components; subthreshold region; Boundary conditions; Educational institutions; Electric potential; Electrons; MOSFETs; Nanoscale devices; Numerical simulation; Poisson equations; Semiconductor device modeling; Silicon;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1891-6
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422454
