• DocumentCode
    2660305
  • Title

    Analytic diffusion and drift components of drain current for double gate MOSFETs

  • Author

    Shih, Chun-Hsing ; Wang, Jhong-Sheng

  • Author_Institution
    Yuan Ze Univ., Taipei
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Analytic, sound expressions of drain currents are derived for double gate MOSFETs including both drift and diffusion components. Although the drift current is strongly enhanced beyond threshold voltage, the diffusion current plays a more important role in the subthreshold region.
  • Keywords
    MOSFET; diffusion; diffusion components; double gate MOSFETs; drain currents; drift components; subthreshold region; Boundary conditions; Educational institutions; Electric potential; Electrons; MOSFETs; Nanoscale devices; Numerical simulation; Poisson equations; Semiconductor device modeling; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1891-6
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422454
  • Filename
    4422454
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2660305