Title :
High-Brightness from an Unstable Resonator Mid-IR Semiconductor Laser
Author :
Ongstad, A.P. ; Dente, G.C. ; Tilton, M.L. ; Chavez, J.C. ; Kaspi, R. ; Gianardi, D.M.
Author_Institution :
Air Force Res. Lab., AFRL-DELS, Kirtland AFB, NM
Abstract :
We describe high-brightness, broad-area mid-IR semiconductor lasers. These devices were fabricated in our laboratory using a commercial solid-source MBE system, configured specifically for antimonide alloy deposition. The laser structures incorporated fourteen type-II quantum wells embedded in thick waveguide/absorber regions composed of In0.2Ga0.8AsySb1-y . Each type-II well is comprised of a ~24 Aring thick In0.4 Ga0.6Sb hole bearing layer, which is sandwiched in between two coupled InAs electron wells; as we vary the InAs thickness from 3 to 30 Aring we tune the laser from 2.5 mum to 9.5 mum
Keywords :
III-V semiconductors; arsenic compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser tuning; molecular beam epitaxial growth; quantum well lasers; semiconductor lasers; 2.5 to 9.5 micron; 3 to 30 Aring; In0.2Ga0.8AsySb1-y; InAs electron wells; antimonide alloy deposition; fourteen type-II quantum wells; high-brightness mid-IR semiconductor laser; laser structures; laser tuning; solid-source MBE system; thick waveguide-absorber regions; unstable resonator; Brightness; Diffraction; Fabry-Perot; Laboratories; Mirrors; Optical resonators; Pump lasers; Quantum well lasers; Semiconductor lasers; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
DOI :
10.1109/ISLC.2006.1708103
