Title :
Physics based current and capacitance modeling of short-channel double gate MOSFETs
Author :
Børli, Håkon ; Kolberg, Sigbjørn ; Fjeldly, Tor A.
Author_Institution :
Department of Electronics and Telecommunications, Norwegian University of Science and Technology, UniK - University Graduate Center, Kjeller, Norway
Keywords :
Capacitance; Conformal mapping; Educational institutions; Electrodes; Electrostatics; MOSFETs; Numerical simulation; Physics; Solid modeling; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422456
