Low-loss high-power AlInGaN RF switches

Author

Simin, Grigory ; Xuhong Hu ; Zijiang Yang ; Jinwei Yang ; Shur, Michael ; Gaska, Remis

Author_Institution

Electrical Engineering, University of South Carolina, USA

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

The importance of RF control devices in modern microwave technique continuously increases because of increasing complexity and functionality of the RF systems. Satellite communications, software-defined radios, multi-band mobile communications, and radars all require highly reliable, low-loss fast RF switching components. Other key requirements include low DC (control) power consumption, the ability to fabricate multi-element MMICs and compatibility with other RF components.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor switches; wide band gap semiconductors; AlInGaN; low DC (control) power consumption; low-loss fast RF switching components; low-loss high-power AlInGaN RF switches; multi-element MMICs; Communication switching; Communication system control; Control systems; Microwave devices; Microwave theory and techniques; Mobile communication; Radio frequency; Satellite communication; Spaceborne radar; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422461

Filename

4422461