Title :
Simplified Si resonant interband tunnel diodes
Author :
Thompson, Phillip E. ; Jernigan, Glenn G. ; Park, Si-Young ; Yu, Ronghua ; Anisha, R. ; Berger, Paul R. ; Pawlik, David ; Krom, Raymond ; Rommel, Sean L.
Author_Institution :
Naval Res. Lab., Washington
Abstract :
A driving force in electronic device research has been increased functionality with reduced energy loss. One of the techniques proposed for meeting these goals has been the employment of tunnel diodes integrated with conventional transistors to form logic and memory circuits. Considerable progress has been made in the area of Si-based resonant interband tunnel diodes (RITD).
Keywords :
elemental semiconductors; silicon; tunnel diodes; Si; electronic device; energy loss reduction; logic circuits; memory circuits; resonant interband tunnel diodes; Annealing; Doping; Heterojunction bipolar transistors; Logic circuits; Power engineering and energy; Resonance; Semiconductor diodes; Substrates; Surface resistance; Temperature sensors;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422467
