• DocumentCode
    2660507
  • Title

    Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy

  • Author

    Krom, Raymond ; Pawlik, D.J. ; Muhkerjee, Sayan ; Pandharpure, S. ; Kurinec, S.K. ; Park, S.-Y. ; Anisha, R. ; Berger, P.R. ; Thompson, P.E. ; Rommel, Sean L.

  • Author_Institution
    Rochester Inst. of Technol., Rochester
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This study reports a Si RITD whose characteristics improve with increasing anneal time, resulting in a peak current density (JP) and PVCR up to 2.97 kA/cm2 and 3.08, respectively.
  • Keywords
    annealing; molecular beam epitaxial growth; resonant tunnelling diodes; PVCR; Si; anneal time study; low-temperature molecular-beam epitaxy; peak current density; resonant interband tunnel diodes; Annealing; Cathodes; Circuits; Contacts; Diodes; Germanium silicon alloys; Molecular beam epitaxial growth; Resonance; Silicon germanium; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1891-6
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422468
  • Filename
    4422468
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2660507