DocumentCode :
2660507
Title :
Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy
Author :
Krom, Raymond ; Pawlik, D.J. ; Muhkerjee, Sayan ; Pandharpure, S. ; Kurinec, S.K. ; Park, S.-Y. ; Anisha, R. ; Berger, P.R. ; Thompson, P.E. ; Rommel, Sean L.
Author_Institution :
Rochester Inst. of Technol., Rochester
fYear :
2007
fDate :
12-14 Dec. 2007
Firstpage :
1
Lastpage :
2
Abstract :
This study reports a Si RITD whose characteristics improve with increasing anneal time, resulting in a peak current density (JP) and PVCR up to 2.97 kA/cm2 and 3.08, respectively.
Keywords :
annealing; molecular beam epitaxial growth; resonant tunnelling diodes; PVCR; Si; anneal time study; low-temperature molecular-beam epitaxy; peak current density; resonant interband tunnel diodes; Annealing; Cathodes; Circuits; Contacts; Diodes; Germanium silicon alloys; Molecular beam epitaxial growth; Resonance; Silicon germanium; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1891-6
Electronic_ISBN :
978-1-4244-1892-3
Type :
conf
DOI :
10.1109/ISDRS.2007.4422468
Filename :
4422468
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2660507
بازگشت