Title :
Germanium profile, graduality and base doping level influences in the performance of SiGe HBT
Author :
García, Eloy Ramírez ; Zerounian, Nicolas ; Aniel, Frédéric ; Aguilar, Mauro A Enciso ; Barbalat, Benoît ; Chevalier, Pascal ; Chantre, Alain
Author_Institution :
Univ. Paris-Sud, Paris
Abstract :
In this paper, results are presented for eight samples. The investigated SiGe HBTs are compatible with the CMOS core process. They are based on a double poly-silicon technology (base and emitter), use a fully self aligned architecture (FSA emitter-base and collector-base junctions) and selective base epitaxy (SEG) with carbon incorporation.
Keywords :
CMOS integrated circuits; Ge-Si alloys; doping profiles; germanium; heterojunction bipolar transistors; semiconductor doping; semiconductor junctions; CMOS core process; SiGe; SiGe HBT; base doping level; collector-base junctions; double poly-silicon technology; emitter-base junctions; fully self aligned architecture; germanium profile; selective base epitaxy; Boron; CMOS process; CMOS technology; Doping profiles; Educational institutions; Epitaxial growth; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1891-6
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422469
