Title :
Low Thermal Resistance, Low Current Density, High-Speed 980 and 850nm VCSELs
Author :
Al-Omari, A.N. ; Carey, G.P. ; Hallstein, S. ; Watson, J.P. ; Dang, G. ; Lear, K.L.
Author_Institution :
Colorado State Univ., Fort Collins, CO
Abstract :
Copper plated, vertical cavity surface emitting lasers fabricated from AlGaAs structures, with thermal resistance up to 50% less than previously published values exhibit increased power, modulation current efficiency factor (MCEF), and maximum modulation bandwidth including 18 GHz at 8 kA/cm2
Keywords :
III-V semiconductors; aluminium compounds; copper; gallium arsenide; laser beams; optical modulation; semiconductor lasers; surface emitting lasers; thermal resistance; 18 GHz; 850 nm; 980 nm; AlGaAs; Cu; VCSEL; copper plated vertical cavity surface emitting lasers; current density; high-speed lasers; modulation bandwidth; modulation current efficiency factor; thermal resistance; Apertures; Bandwidth; Copper; Current density; Heat sinks; Resistance heating; Surface emitting lasers; Surface resistance; Thermal resistance; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
DOI :
10.1109/ISLC.2006.1708119
