DocumentCode
2660628
Title
Two-Band k·p model for the conduction band in silicon: impact of Strain and confinement on band structure and mobility
Author
Sverdlov, Viktor ; Karlowatz, Gerhard ; Dhar, Siddhartha ; Kosina, Hans ; Selberherr, Siegfried
Author_Institution
Tech. Univ. Wien, Vienna
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
In this work we demonstrate that the two-band kldrp model ((Sverdlov et al., 2007) describes accurately dependences of the valley shifts and the effective masses on the shear strain component. The theory includes non-parabolicity effects due to the interaction between the two lowest conduction bands and provides an analytical expression for the dependence of the effective masses on shear strain.
Keywords
conduction bands; effective mass; elemental semiconductors; k.p calculations; semiconductor thin films; silicon; conduction band; confinement impact; effective masses; non-parabolicity effects; shear strain; strain impact; two-band kldrp model; valley shifts; Capacitive sensors; Compressive stress; Dispersion; Educational institutions; Effective mass; MOSFETs; Microelectronics; Semiconductor films; Silicon; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1891-6
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422477
Filename
4422477
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