• DocumentCode
    2660661
  • Title

    Impact of source to drain tunneling on the Ion/Ioff trade-off of alternative channel material MOSFETs

  • Author

    Rafhay, Quentin ; Clerc, Raphaël ; Ghibaudo, Gérard ; Pananakakis, Georges

  • Author_Institution
    Minatec, Grenoble
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, the light effective masses of the Ge and GaAs bandstructure, responsible for enhanced injection velocities compared to Si and s-Si are also responsible for a significant increase of SDT. When SDT is taken into account, and for devices with negligible SCEs, it has been found that Si and especially s-Si, offers a much better lon/loff trade-off than Ge and GaAs.
  • Keywords
    III-V semiconductors; MOSFET; band structure; elemental semiconductors; gallium arsenide; germanium; silicon; tunnelling; GaAs; GaAs band structure; Ge; MOSFET; Si; alternative channel material; injection velocities; light effective masses; short channel effects; source to drain tunneling; Educational institutions; Effective mass; Gallium arsenide; Leakage current; MOSFETs; Quantization; Silicon; Solid state circuits; State estimation; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422479
  • Filename
    4422479
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2660661