Title :
Impact of source to drain tunneling on the Ion/Ioff trade-off of alternative channel material MOSFETs
Author :
Rafhay, Quentin ; Clerc, Raphaël ; Ghibaudo, Gérard ; Pananakakis, Georges
Author_Institution :
Minatec, Grenoble
Abstract :
In this paper, the light effective masses of the Ge and GaAs bandstructure, responsible for enhanced injection velocities compared to Si and s-Si are also responsible for a significant increase of SDT. When SDT is taken into account, and for devices with negligible SCEs, it has been found that Si and especially s-Si, offers a much better lon/loff trade-off than Ge and GaAs.
Keywords :
III-V semiconductors; MOSFET; band structure; elemental semiconductors; gallium arsenide; germanium; silicon; tunnelling; GaAs; GaAs band structure; Ge; MOSFET; Si; alternative channel material; injection velocities; light effective masses; short channel effects; source to drain tunneling; Educational institutions; Effective mass; Gallium arsenide; Leakage current; MOSFETs; Quantization; Silicon; Solid state circuits; State estimation; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422479
